Power
DMN3016LPS-13 Diodes Incorporated Inventory and RFQ Quote
MOSFET N-Ch 30V Enh FET 20Vgss 1.18W 1415pF DMN3016LPS-13 Diodes Incorporated PowerDI3333-8 Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- DMN3016LPS-13
- Brand
- Diodes Incorporated
- Qty
- 564000
- Package
- PowerDI3333-8
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
MOSFET N-Ch 30V Enh FET 20Vgss 1.18W 1415pF
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 30 V
- Transistor Polarity: N-Channel
- Package / Case: PowerDI5060-8
- Vgs th - Gate-Source Threshold Voltage: 1.4 V
- Width: 6.15 mm
- Qg - Gate Charge: 25.1 nC
- Vgs - Gate-Source Voltage: 20 V
- Type: Enhancement Mode MOSFET
- Fall Time: 5.6 ns
- Mounting Style: SMD/SMT