Semiconductors
DMN2451UFB4Q-7R Diodes Incorporated Inventory and RFQ Quote
20V 1.3A 660mW 400mΩ@600mA,4.5V 1V@250uA 1PCSNChannel X2-DFN1006-3 MOSFETs ROHS DMN2451UFB4Q-7R Diodes Incorporated Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- DMN2451UFB4Q-7R
- Brand
- Diodes Incorporated
- Qty
- 542000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
20V 1.3A 660mW 400mΩ@600mA,4.5V 1V@250uA 1PCSNChannel X2-DFN1006-3 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 1.3A
- Power Dissipation (Pd): 660mW
- Drain Source On Resistance (RDS(on)@Vgs: 400mΩ@600mA
- Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
- Type: 1 N
- Input Capacitance (Ciss@Vds): 32pF@16V
- Total Gate Charge (Qg@Vgs): 6.4nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)