Semiconductors
DMN2013UFDEQ-7 Diodes Incorporated Inventory and RFQ Quote
20V 10.5A 660mW 11mΩ@8.5A,4.5V 1.1V@250uA 1PCSNChannel UDFN2020-6 MOSFETs ROHS DMN2013UFDEQ-7 Diodes Incorporated U-DFN2020-6 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- DMN2013UFDEQ-7
- Brand
- Diodes Incorporated
- Qty
- 520000
- Package
- U-DFN2020-6
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
20V 10.5A 660mW 11mΩ@8.5A,4.5V 1.1V@250uA 1PCSNChannel UDFN2020-6 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 10.5A
- Power Dissipation (Pd): 660mW
- Drain Source On Resistance (RDS(on)@Vgs: 11mΩ@8.5A
- Gate Threshold Voltage (Vgs(th)@Id): 1.1V@250uA
- Type: 1 N
- Input Capacitance (Ciss@Vds): 2.453nF@10V
- Total Gate Charge (Qg@Vgs): 25.8nC@8V
- Operating Temperature: -55℃~+150℃@(Tj)