Semiconductors
DMN10H220LE-13 Diodes Incorporated Inventory and RFQ Quote
MOSFET FET BVDSS 61V 100V N-Ch 3A 401pF 8.3nC DMN10H220LE-13 Diodes Incorporated Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- DMN10H220LE-13
- Brand
- Diodes Incorporated
- Qty
- 530000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET FET BVDSS 61V 100V N-Ch 3A 401pF 8.3nC
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 100 V
- Transistor Polarity: N-Channel
- Package / Case: SOT-223-3
- Vgs th - Gate-Source Threshold Voltage: 1.7 V
- Qg - Gate Charge: 8.3 nC
- Vgs - Gate-Source Voltage: 20 V
- Fall Time: 3.6 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET
- Brand: Diodes Incorporated