Semiconductors
DMN10H170SVT-7 Diodes Incorporated Inventory and RFQ Quote
MOSFET 100V N-Ch Enh FET 20Vgss 2.6A 1.2W DMN10H170SVT-7 Diodes Incorporated Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- DMN10H170SVT-7
- Brand
- Diodes Incorporated
- Qty
- 532000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET 100V N-Ch Enh FET 20Vgss 2.6A 1.2W
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 100 V
- Transistor Polarity: N-Channel
- Package / Case: TSOT-26-6
- Vgs th - Gate-Source Threshold Voltage: 1 V
- Width: 1.6 mm
- Qg - Gate Charge: 9.7 nC
- Vgs - Gate-Source Voltage: 20 V
- Fall Time: 12 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET