Semiconductors
DMN1019UVT-7 Diodes Incorporated Inventory and RFQ Quote
MOSFET 12V Enh Mode FET DMN1019UVT-7 Diodes Incorporated Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- DMN1019UVT-7
- Brand
- Diodes Incorporated
- Qty
- 518000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET 12V Enh Mode FET
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 12 V
- Transistor Polarity: N-Channel
- Package / Case: TSOT-26-6
- Vgs th - Gate-Source Threshold Voltage: 350 mV
- Qg - Gate Charge: 50.4 nC
- Vgs - Gate-Source Voltage: 4.5 V
- Fall Time: 11.6 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET
- Brand: Diodes Incorporated