Semiconductors
DMG6602SVTQ-7 Diodes Incorporated Inventory and RFQ Quote
MOSFET 30V Vds 20V Vgs Complmtry Enh FET DMG6602SVTQ-7 Diodes Incorporated Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- DMG6602SVTQ-7
- Brand
- Diodes Incorporated
- Qty
- 505000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET 30V Vds 20V Vgs Complmtry Enh FET
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 30 V
- Transistor Polarity: N-Channel, P-Channel
- Rds On - Drain-Source Resistance: 100 mOhms, 140 mOhms
- Package / Case: TSOT-26-6
- Vgs th - Gate-Source Threshold Voltage: 1 V, 2.3 V
- Qg - Gate Charge: 9 nC, 7 nC
- Vgs - Gate-Source Voltage: 20 V
- Fall Time: 3 ns, 13 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET