Power
DMG3N60SCT Diodes Incorporated Inventory and RFQ Quote
MOSFET MOSFET BVDSS: 501V-650V DMG3N60SCT Diodes Incorporated TO-220 Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- DMG3N60SCT
- Brand
- Diodes Incorporated
- Qty
- 511000
- Package
- TO-220
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
MOSFET MOSFET BVDSS: 501V-650V
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 600 V
- Transistor Polarity: N-Channel
- Package / Case: TO-220AB-3
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Qg - Gate Charge: 12.6 nC
- Vgs - Gate-Source Voltage: 30 V
- Fall Time: 28 ns
- Mounting Style: Through Hole
- Product Category: MOSFET
- Brand: Diodes Incorporated