Power
DGTD65T15H2TF Diodes Incorporated Inventory and RFQ Quote
IGBT Transistors IGBT 600V-X DGTD65T15H2TF Diodes Incorporated TO-220F Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- DGTD65T15H2TF
- Brand
- Diodes Incorporated
- Qty
- 525000
- Package
- TO-220F
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
IGBT Transistors IGBT 600V-X
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > IGBT Transistors
- Lifecycle
- New Product: New from this manufacturer.
- Reference Source
- Mouser
Key Specifications
- Gate-Emitter Leakage Current: +/- 100 nA
- Collector-Emitter Saturation Voltage: 1.65 V
- Product Category: IGBT Transistors
- Subcategory: IGBTs
- Maximum Operating Temperature: + 175 C
- Brand: Diodes Incorporated
- Pd - Power Dissipation: 48 W
- Continuous Collector Current at 25 C: 30 A
- Collector- Emitter Voltage VCEO Max: 650 V
- Mounting Style: Through Hole