Semiconductors
CS4N65FA9HD Texas Instruments Inventory and RFQ Quote
650V 4A 2.5Ω@10V,2A 30W 4V@250uA 1PCSNChannel TO-220F MOSFETs ROHS CS4N65FA9HD Texas Instruments Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- CS4N65FA9HD
- Brand
- Texas Instruments
- Qty
- 579000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
650V 4A 2.5Ω@10V,2A 30W 4V@250uA 1PCSNChannel TO-220F MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 4A
- Drain Source On Resistance (RDS(on)@Vgs: 2.5Ω@10V
- Power Dissipation (Pd): 30W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1 N