Semiconductors
CJND2004 Diodes Incorporated Inventory and RFQ Quote
20V 10A 8.5mΩ@4.5V,3A 1V 1 N-Channel DFNWB-6-EP(2x5) MOSFETs ROHS CJND2004 Diodes Incorporated DFNWB52-6L Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- CJND2004
- Brand
- Diodes Incorporated
- Qty
- 506000
- Package
- DFNWB52-6L
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
20V 10A 8.5mΩ@4.5V,3A 1V 1 N-Channel DFNWB-6-EP(2x5) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 10A
- Drain Source On Resistance (RDS(on)@Vgs: 8.5mΩ@4.5V
- Power Dissipation (Pd): -
- Gate Threshold Voltage (Vgs(th)@Id): 1V
- Reverse Transfer Capacitance (Crss@Vds): 210pF
- Type: 1 N
- Input Capacitance (Ciss@Vds): 1.95nF
- Total Gate Charge (Qg@Vgs): 17nC
- Operating Temperature: -