Semiconductors
CJAE35SN06 Diodes Incorporated Inventory and RFQ Quote
60V 35A 35W 7.5mΩ@10V 2.5V 1 N-Channel WDFN-8(3x3) MOSFETs ROHS CJAE35SN06 Diodes Incorporated DFNWB33-8L Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- CJAE35SN06
- Brand
- Diodes Incorporated
- Qty
- 548000
- Package
- DFNWB33-8L
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
60V 35A 35W 7.5mΩ@10V 2.5V 1 N-Channel WDFN-8(3x3) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 35A
- Power Dissipation (Pd): 35W
- Drain Source On Resistance (RDS(on)@Vgs: 7.5mΩ@10V
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V
- Reverse Transfer Capacitance (Crss@Vds): 25.5pF
- Type: 1 N
- Input Capacitance (Ciss@Vds): 1.27nF
- Total Gate Charge (Qg@Vgs): 28nC
- Operating Temperature: -55℃~+150℃@(Tj)