Semiconductors
CJAE10P06 Texas Instruments Inventory and RFQ Quote
60V 10A 26mΩ@10V 3W 3V 1 Piece P-Channel DFNWB-8L-EP(3x3) MOSFETs ROHS CJAE10P06 Texas Instruments Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- CJAE10P06
- Brand
- Texas Instruments
- Qty
- 591000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
60V 10A 26mΩ@10V 3W 3V 1 Piece P-Channel DFNWB-8L-EP(3x3) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 10A
- Drain Source On Resistance (RDS(on)@Vgs: 26mΩ@10V
- Power Dissipation (Pd): 3W
- Gate Threshold Voltage (Vgs(th)@Id): 3V
- Reverse Transfer Capacitance (Crss@Vds): 515pF
- Type: 1 P
- Input Capacitance (Ciss@Vds): 4.5nF
- Total Gate Charge (Qg@Vgs): 52nC
- Operating Temperature: -55℃~+150℃@(Tj)