Semiconductors
BUK768R1-100E,118 Nexperia USA Inc. Inventory and RFQ Quote
MOSFET TrenchMOS N-Channel BUK768R1-100E,118 Nexperia USA Inc. Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- BUK768R1-100E,118
- Brand
- Nexperia USA Inc.
- Qty
- 540000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET TrenchMOS N-Channel
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 100 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 8.1 mOhms
- Package / Case: TO-263-3
- Vgs th - Gate-Source Threshold Voltage: 3 V
- Qg - Gate Charge: 108 nC
- Vgs - Gate-Source Voltage: 20 V
- Fall Time: 49.6 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET