Semiconductors
BSZ180P03NS3GATMA1 Infineon Technologies Inventory and RFQ Quote
MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 BSZ180P03NS3GATMA1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- BSZ180P03NS3GATMA1
- Brand
- Infineon Technologies
- Qty
- 583000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 30 V
- Transistor Polarity: P-Channel
- Package / Case: TSDSON-8
- Vgs th - Gate-Source Threshold Voltage: 3.1 V
- Width: 3.3 mm
- Qg - Gate Charge: 30 nC
- Vgs - Gate-Source Voltage: 25 V
- Part # Aliases: BSZ180P03NS3 BSZ18P3NS3GXT G SP000709744
- Fall Time: 3 ns
- Mounting Style: SMD/SMT