Semiconductors
BSZ096N10LS5 Infineon Technologies Inventory and RFQ Quote
100V 62A 8.2mΩ@10V,20A 69W 1.7V@36uA 1PCSNChannel DFN-8(3.3x3.3) MOSFETs ROHS BSZ096N10LS5 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- BSZ096N10LS5
- Brand
- Infineon Technologies
- Qty
- 578000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 62A 8.2mΩ@10V,20A 69W 1.7V@36uA 1PCSNChannel DFN-8(3.3x3.3) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 62A
- Drain Source On Resistance (RDS(on)@Vgs: 8.2mΩ@10V
- Power Dissipation (Pd): 69W
- Gate Threshold Voltage (Vgs(th)@Id): 1.7V@36uA
- Reverse Transfer Capacitance (Crss@Vds): 12pF@50V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 1.6nF@50V
- Total Gate Charge (Qg@Vgs): 22nC@0~10V
- Operating Temperature: -55℃~+150℃@(Tj)