Semiconductors
BSZ0910NDXTMA1 Infineon Technologies Inventory and RFQ Quote
MOSFET DIFFERENTIATED MOSFETS BSZ0910NDXTMA1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- BSZ0910NDXTMA1
- Brand
- Infineon Technologies
- Qty
- 580000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET DIFFERENTIATED MOSFETS
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Lifecycle
- New Product: New from this manufacturer.
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 30 V
- Transistor Polarity: N-Channel
- Package / Case: PG-WISON-8
- Vgs th - Gate-Source Threshold Voltage: 1.2 V
- Qg - Gate Charge: 4 nC
- Vgs - Gate-Source Voltage: 10 V
- Part # Aliases: BSZ0910ND SP001699886
- Fall Time: 2.8 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET