Semiconductors
BSZ076N06NS3 G Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 60V 20A TDSON-8 OptiMOS 3 BSZ076N06NS3 G Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- BSZ076N06NS3 G
- Brand
- Infineon Technologies
- Qty
- 545000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 60V 20A TDSON-8 OptiMOS 3
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Lifecycle
- NRND: Not recommended for new designs.
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 60 V
- Transistor Polarity: N-Channel
- Package / Case: TSDSON-8
- Vgs th - Gate-Source Threshold Voltage: 3 V
- Width: 3.3 mm
- Qg - Gate Charge: 37 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: BSZ076N06NS3GATMA1 BSZ76N6NS3GXT SP000454420
- Type: OptiMOS 3 Power-Transistor
- Fall Time: 5 ns