Diode
BSS83PH6327XTSA1 Infineon Technologies Inventory and RFQ Quote
MOSFET P-Ch SOT-23-3 BSS83PH6327XTSA1 Infineon Technologies Diode advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- BSS83PH6327XTSA1
- Brand
- Infineon Technologies
- Qty
- 592000
- Package
- Date Code
- 25+
- Alternative
- Category
- Diode
Technical Overview
MOSFET P-Ch SOT-23-3
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 60 V
- Transistor Polarity: P-Channel
- Rds On - Drain-Source Resistance: 3 Ohms
- Package / Case: SOT-23-3
- Vgs th - Gate-Source Threshold Voltage: 1 V
- Width: 1.3 mm
- Qg - Gate Charge: 2.38 nC
- Vgs - Gate-Source Voltage: 4.5 V
- Part # Aliases: BSS83P BSS83PH6327XT H6327 SP000702486
- Fall Time: 61 ns