Diode
BSS806NEH6327XTSA1 Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 20V 2.3A SOT-23-3 BSS806NEH6327XTSA1 Infineon Technologies Diode advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- BSS806NEH6327XTSA1
- Brand
- Infineon Technologies
- Qty
- 574000
- Package
- Date Code
- 25+
- Alternative
- Category
- Diode
Technical Overview
MOSFET N-Ch 20V 2.3A SOT-23-3
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 20 V
- Transistor Polarity: N-Channel
- Package / Case: SOT-23-3
- Vgs th - Gate-Source Threshold Voltage: 300 mV
- Width: 1.3 mm
- Qg - Gate Charge: 1.7 nC
- Vgs - Gate-Source Voltage: 8 V
- Part # Aliases: BSS806NE H6327 SP000999336
- Fall Time: 3.7 ns
- Mounting Style: SMD/SMT