Diode
BSS316NH6327 Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 30V 1.4A SOT-23-3 BSS316NH6327 Infineon Technologies Diode advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- BSS316NH6327
- Brand
- Infineon Technologies
- Qty
- 533000
- Package
- Date Code
- 25+
- Alternative
- Category
- Diode
Technical Overview
MOSFET N-Ch 30V 1.4A SOT-23-3
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 30 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 119 mOhms
- Package / Case: SOT-23-3
- Vgs th - Gate-Source Threshold Voltage: 1.2 V
- Width: 1.3 mm
- Qg - Gate Charge: 600 pC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: BSS316NH6327XT BSS316NH6327XTSA1 SP000928948
- Fall Time: 1 ns