Diode
BSS308PEH6327XTSA1 Infineon Technologies Inventory and RFQ Quote
MOSFET P-Ch -30V -2A SOT-23-3 BSS308PEH6327XTSA1 Infineon Technologies Diode advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- BSS308PEH6327XTSA1
- Brand
- Infineon Technologies
- Qty
- 593000
- Package
- Date Code
- 25+
- Alternative
- Category
- Diode
Technical Overview
MOSFET P-Ch -30V -2A SOT-23-3
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 30 V
- Transistor Polarity: P-Channel
- Rds On - Drain-Source Resistance: 62 mOhms
- Package / Case: PG-SOT-23-3
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Width: 1.3 mm
- Qg - Gate Charge: - 5 nC
- Vgs - Gate-Source Voltage: 10 V
- Part # Aliases: BSS308PE BSS38PEH6327XT H6327 SP000928942
- Fall Time: 2.8 ns