Diode
BSS123NH6327XTSA1 Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 100V 190mA SOT-23-3 BSS123NH6327XTSA1 Infineon Technologies Diode advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- BSS123NH6327XTSA1
- Brand
- Infineon Technologies
- Qty
- 512000
- Package
- Date Code
- 25+
- Alternative
- Category
- Diode
Technical Overview
MOSFET N-Ch 100V 190mA SOT-23-3
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 100 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 6 Ohms
- Package / Case: SOT-23-3
- Vgs th - Gate-Source Threshold Voltage: 800 mV
- Width: 1.3 mm
- Qg - Gate Charge: 0.6 nC
- Vgs - Gate-Source Voltage: 10 V
- Part # Aliases: BSS123N BSS123NH6327XT H6327 SP000870646
- Fall Time: 22 ns