Diode
BSS123-TP Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch Enh FET 100Vds 0.17A 20Vgs 0.35W BSS123-TP Infineon Technologies Diode advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- BSS123-TP
- Brand
- Infineon Technologies
- Qty
- 529000
- Package
- Date Code
- 25+
- Alternative
- Category
- Diode
Technical Overview
MOSFET N-Ch Enh FET 100Vds 0.17A 20Vgs 0.35W
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Lifecycle
- New At Mouser
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 100 V
- Transistor Polarity: N-Channel
- Package / Case: SOT-23-3
- Vgs th - Gate-Source Threshold Voltage: 1 V
- Qg - Gate Charge: 1.4 nC
- Vgs - Gate-Source Voltage: 10 V
- Fall Time: 16 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET
- Brand: Micro Commercial Components (MCC)