Semiconductors
BSO615CGHUMA1 Infineon Technologies Inventory and RFQ Quote
MOSFET N and P-Ch 60V 3.1A, -2A DSO-8 BSO615CGHUMA1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- BSO615CGHUMA1
- Brand
- Infineon Technologies
- Qty
- 586000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N and P-Ch 60V 3.1A, -2A DSO-8
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 60 V
- Transistor Polarity: N-Channel, P-Channel
- Package / Case: SO-8
- Vgs th - Gate-Source Threshold Voltage: 1.2 V, 2 V
- Width: 3.9 mm
- Moisture Sensitive: Yes
- Qg - Gate Charge: 22.5 nC, 20 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: BSO615C BSO615CGXT G SP000216311
- Fall Time: 18 ns, 90 ns