Semiconductors
BSO110N03MS G Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 30V 12.1A DSO-8 OptiMOS 3M BSO110N03MS G Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- BSO110N03MS G
- Brand
- Infineon Technologies
- Qty
- 521000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 30V 12.1A DSO-8 OptiMOS 3M
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 30 V
- Transistor Polarity: N-Channel
- Package / Case: SO-8
- Vgs th - Gate-Source Threshold Voltage: 1 V
- Width: 3.9 mm
- Moisture Sensitive: Yes
- Qg - Gate Charge: 20 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: BSO110N03MSGXUMA1 BSO11N3MSGXT SP000446062
- Fall Time: 4.4 ns