Semiconductors
BSM25GB120DN2 Infineon Technologies Inventory and RFQ Quote
200W 38A 1.2kV IGBT Transistors / Modules ROHS BSM25GB120DN2 Infineon Technologies S94X34-7L Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- BSM25GB120DN2
- Brand
- Infineon Technologies
- Qty
- 539000
- Package
- S94X34-7L
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
200W 38A 1.2kV IGBT Transistors / Modules ROHS
- Source Category
- /MOS / > IGBT /
- Reference Source
- LCSC
Key Specifications
- Power Dissipation (Pd): 200W
- Operating Temperature: -
- Collector Current (Ic): 38A
- Collector-Emitter Breakdown Voltage (Vces): 1.2kV
- Input Capacitance (Cies@Vce): 1.65nF@25V
- Type: -
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): 3V@15V