Semiconductors
BSM100GB120DN2 Infineon Technologies Inventory and RFQ Quote
IGBT Modules 1200V 100A DUAL BSM100GB120DN2 Infineon Technologies S106X61-7L Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- BSM100GB120DN2
- Brand
- Infineon Technologies
- Qty
- 515000
- Package
- S106X61-7L
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
IGBT Modules 1200V 100A DUAL
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > IGBT Modules
- Lifecycle
- NRND: Not recommended for new designs.
- Reference Source
- Mouser
Key Specifications
- Gate-Emitter Leakage Current: 200 nA
- Width: 61.4 mm
- Package / Case: Half Bridge2
- Packaging: Tray
- Product: IGBT Silicon Modules
- Product Category: IGBT Modules
- Brand: Infineon Technologies
- Collector- Emitter Voltage VCEO Max: 1200 V
- Product Type: IGBT Modules
- Maximum Operating Temperature: + 150 C