Semiconductors
BSG0811NDATMA1 Infineon Technologies Inventory and RFQ Quote
MOSFET LV POWER MOS BSG0811NDATMA1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- BSG0811NDATMA1
- Brand
- Infineon Technologies
- Qty
- 588000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET LV POWER MOS
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 25 V
- Transistor Polarity: N-Channel
- Package / Case: TISON-8
- Vgs th - Gate-Source Threshold Voltage: 1.2 V
- Width: 5 mm
- Qg - Gate Charge: 8.4 nC, 29 nC
- Vgs - Gate-Source Voltage: 16 V
- Part # Aliases: BSG0811ND SP001075902
- Fall Time: 1.4 ns, 2.6 ns
- Mounting Style: SMD/SMT