Transistor
BSC190N12NS3 G Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 120V 44A TDSON-8 OptiMOS 3 BSC190N12NS3 G Infineon Technologies Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- BSC190N12NS3 G
- Brand
- Infineon Technologies
- Qty
- 583000
- Package
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
MOSFET N-Ch 120V 44A TDSON-8 OptiMOS 3
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 120 V
- Transistor Polarity: N-Channel
- Package / Case: TDSON-8
- Vgs th - Gate-Source Threshold Voltage: 3 V
- Width: 5.15 mm
- Qg - Gate Charge: 26 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: BSC190N12NS3GATMA1 BSC19N12NS3GXT SP000652752
- Type: OptiMOS 3 Power-Transistor
- Fall Time: 4 ns