Semiconductors
BSC090N03MSGATMA1 Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M BSC090N03MSGATMA1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- BSC090N03MSGATMA1
- Brand
- Infineon Technologies
- Qty
- 600000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 30 V
- Transistor Polarity: N-Channel
- Package / Case: TDSON-8
- Vgs th - Gate-Source Threshold Voltage: 1 V
- Width: 5.15 mm
- Qg - Gate Charge: 24 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: BSC090N03MS BSC9N3MSGXT G SP000313120
- Fall Time: 5.4 ns
- Mounting Style: SMD/SMT