Semiconductors
BSC066N06NS Infineon Technologies Inventory and RFQ Quote
MOSFET DIFFERENTIATED MOSFETS BSC066N06NS Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- BSC066N06NS
- Brand
- Infineon Technologies
- Qty
- 504000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET DIFFERENTIATED MOSFETS
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 60 V
- Transistor Polarity: N-Channel
- Package / Case: PG-TDSON-8
- Vgs th - Gate-Source Threshold Voltage: 2.1 V
- Width: 5.15 mm
- Qg - Gate Charge: 17 nC
- Vgs - Gate-Source Voltage: 10 V
- Part # Aliases: BSC066N06NSATMA1 SP001067000
- Fall Time: 3 ns
- Mounting Style: SMD/SMT