Semiconductors
BSC060P03NS3E G Infineon Technologies Inventory and RFQ Quote
MOSFET P-Ch -30V -100A TDSON-8 OptiMOS P3 BSC060P03NS3E G Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- BSC060P03NS3E G
- Brand
- Infineon Technologies
- Qty
- 509000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET P-Ch -30V -100A TDSON-8 OptiMOS P3
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 30 V
- Transistor Polarity: P-Channel
- Package / Case: TDSON-8
- Width: 5.15 mm
- Qg - Gate Charge: 61 nC
- Vgs - Gate-Source Voltage: 25 V
- Part # Aliases: BSC060P03NS3EGATMA1 BSC6P3NS3EGXT SP000472984
- Fall Time: 34 nS
- Mounting Style: SMD/SMT
- Product Category: MOSFET