Semiconductors
BSC060N10NS3 G Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 BSC060N10NS3 G Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- BSC060N10NS3 G
- Brand
- Infineon Technologies
- Qty
- 539000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 100 V
- Transistor Polarity: N-Channel
- Package / Case: TDSON-8
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Width: 5.15 mm
- Qg - Gate Charge: 68 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: BSC060N10NS3GATMA1 BSC6N1NS3GXT SP000446584
- Fall Time: 12 ns
- Mounting Style: SMD/SMT