Semiconductors
BCW66H LGE Inventory and RFQ Quote
75V 630@2mA,5V 800mA NPN SOT-23 Bipolar (BJT) ROHS BCW66H LGE Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- BCW66H
- Brand
- LGE
- Qty
- 524000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
75V 630@2mA,5V 800mA NPN SOT-23 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 20nA
- Collector-Emitter Breakdown Voltage (Vceo): 75V
- DC Current Gain (hFE@Ic: 630@2mA
- Collector Current (Ic): 800mA
- Transition Frequency (fT): 170MHz
- Transistor Type: NPN
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 700mV@500mA
- Operating Temperature: -65℃~+150℃