Transistor
BC857AHE3-TP Infineon Technologies Inventory and RFQ Quote
45V 310mW 125@2mA,5V 100mA PNP SOT-23 Bipolar (BJT) ROHS BC857AHE3-TP Infineon Technologies Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- BC857AHE3-TP
- Brand
- Infineon Technologies
- Qty
- 529000
- Package
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
45V 310mW 125@2mA,5V 100mA PNP SOT-23 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 15nA
- Collector-Emitter Breakdown Voltage (Vceo): 45V
- Power Dissipation (Pd): 310mW
- DC Current Gain (hFE@Ic: 125@2mA
- Collector Current (Ic): 100mA
- Transition Frequency (fT): 200MHz
- Transistor Type: PNP
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 650mV@5mA
- Operating Temperature: -55℃~+150℃@(Tj)