Transistor
BC847AWHE3-TP Infineon Technologies Inventory and RFQ Quote
45V 200mW 110@2mA,5V 100mA NPN SOT-323 Bipolar (BJT) ROHS BC847AWHE3-TP Infineon Technologies Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- BC847AWHE3-TP
- Brand
- Infineon Technologies
- Qty
- 578000
- Package
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
45V 200mW 110@2mA,5V 100mA NPN SOT-323 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 45V
- Power Dissipation (Pd): 200mW
- DC Current Gain (hFE@Ic: 110@2mA
- Collector Current (Ic): 100mA
- Transition Frequency (fT): 150MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 500mV@5mA
- Transistor Type: NPN
- Operating Temperature: -65℃~+150℃@(Tj)