Transistor
BC846AHE3-TP Infineon Technologies Inventory and RFQ Quote
65V 225mW 110@2mA,5V 100mA SOT-23 Bipolar (BJT) ROHS BC846AHE3-TP Infineon Technologies Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- BC846AHE3-TP
- Brand
- Infineon Technologies
- Qty
- 593000
- Package
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
65V 225mW 110@2mA,5V 100mA SOT-23 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 65V
- Power Dissipation (Pd): 225mW
- DC Current Gain (hFE@Ic: 110@2mA
- Collector Current (Ic): 100mA
- Transition Frequency (fT): 100MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 500mV@100mA
- Operating Temperature: -55℃~+150℃@(Tj)