Power
AUIRF1010EZS Infineon Technologies Inventory and RFQ Quote
MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms AUIRF1010EZS Infineon Technologies Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- AUIRF1010EZS
- Brand
- Infineon Technologies
- Qty
- 511000
- Package
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 60 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 8.5 mOhms
- Package / Case: TO-263-3
- Width: 9.25 mm
- Qg - Gate Charge: 58 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: SP001516450
- Fall Time: 54 ns
- Mounting Style: SMD/SMT