Semiconductors
ASDM100R066NQ-R ASDsemi Inventory and RFQ Quote
100V 68A 5.9mΩ@10V,13.5A 108W 2.3V@250uA 1PCSNChannel PDFN-8(5x6) MOSFETs ROHS ASDM100R066NQ-R ASDsemi PDFN5X6 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- ASDM100R066NQ-R
- Brand
- ASDsemi
- Qty
- 544000
- Package
- PDFN5X6
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 68A 5.9mΩ@10V,13.5A 108W 2.3V@250uA 1PCSNChannel PDFN-8(5x6) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 68A
- Drain Source On Resistance (RDS(on)@Vgs: 5.9mΩ@10V
- Power Dissipation (Pd): 108W
- Gate Threshold Voltage (Vgs(th)@Id): 2.3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 20pF@50V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 3.32nF@50V
- Total Gate Charge (Qg@Vgs): 45nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)