Semiconductors
APJ14N65D A Power microelectronics Inventory and RFQ Quote
650V 8A 25.5W 560mΩ@10V,3.2A 3.3V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS APJ14N65D A Power microelectronics TO-252 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- APJ14N65D
- Brand
- A Power microelectronics
- Qty
- 516000
- Package
- TO-252
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
650V 8A 25.5W 560mΩ@10V,3.2A 3.3V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 8A
- Power Dissipation (Pd): 25.5W
- Drain Source On Resistance (RDS(on)@Vgs: 560mΩ@10V
- Gate Threshold Voltage (Vgs(th)@Id): 3.3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 1.32pF@100V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 438pF@100V
- Total Gate Charge (Qg@Vgs): 11nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)