Semiconductors
APG60N10D A Power microelectronics Inventory and RFQ Quote
100V 60A 8mΩ@10V,10A 125W 2.5V@250uA 1 N-Channel TO-252-3 MOSFETs ROHS APG60N10D A Power microelectronics TO-252 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- APG60N10D
- Brand
- A Power microelectronics
- Qty
- 533000
- Package
- TO-252
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 60A 8mΩ@10V,10A 125W 2.5V@250uA 1 N-Channel TO-252-3 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 60A
- Drain Source On Resistance (RDS(on)@Vgs: 8mΩ@10V
- Power Dissipation (Pd): 125W
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 6.5pF@50V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 2.604nF@50V
- Total Gate Charge (Qg@Vgs): 49.9nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)