Semiconductors
AP8N06SI A Power microelectronics Inventory and RFQ Quote
60V 8.5A 1.2W 28mΩ@10V,10A 1.6V@250uA 1 N-Channel SOT-89-3 MOSFETs ROHS AP8N06SI A Power microelectronics SOT-89-3 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- AP8N06SI
- Brand
- A Power microelectronics
- Qty
- 512000
- Package
- SOT-89-3
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
60V 8.5A 1.2W 28mΩ@10V,10A 1.6V@250uA 1 N-Channel SOT-89-3 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 8.5A
- Power Dissipation (Pd): 1.2W
- Drain Source On Resistance (RDS(on)@Vgs: 28mΩ@10V
- Gate Threshold Voltage (Vgs(th)@Id): 1.6V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 49.4pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 1.148nF@25V
- Total Gate Charge (Qg@Vgs): 20.3nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)