Semiconductors
AP1606 Texas Instruments Inventory and RFQ Quote
20V 700mA 180mΩ@2.5V,300mA 550mW 800mV@250uA 1PCSNChannel DFN-3L(0.6x1) MOSFETs ROHS AP1606 Texas Instruments Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- AP1606
- Brand
- Texas Instruments
- Qty
- 533000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
20V 700mA 180mΩ@2.5V,300mA 550mW 800mV@250uA 1PCSNChannel DFN-3L(0.6x1) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 700mA
- Drain Source On Resistance (RDS(on)@Vgs: 180mΩ@2.5V
- Power Dissipation (Pd): 550mW
- Gate Threshold Voltage (Vgs(th)@Id): 800mV@250uA
- Reverse Transfer Capacitance (Crss@Vds): 6.5pF@10V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 40pF@10V
- Total Gate Charge (Qg@Vgs): 1.1nC@4.5V
- Operating Temperature: -