Semiconductors
AP15N10D A Power microelectronics Inventory and RFQ Quote
100V 19.3A 65mΩ@10V,5A 30W 1.85V@250uA 1PCSNChannel TO-252-3L MOSFETs ROHS AP15N10D A Power microelectronics TO-252-3 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- AP15N10D
- Brand
- A Power microelectronics
- Qty
- 522000
- Package
- TO-252-3
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 19.3A 65mΩ@10V,5A 30W 1.85V@250uA 1PCSNChannel TO-252-3L MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 19.3A
- Drain Source On Resistance (RDS(on)@Vgs: 65mΩ@10V
- Power Dissipation (Pd): 30W
- Gate Threshold Voltage (Vgs(th)@Id): 1.85V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 40pF@15V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 1.1nF@15V
- Total Gate Charge (Qg@Vgs): 11.9nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)