Semiconductors
AP13P06D A Power microelectronics Inventory and RFQ Quote
60V 13.5A 31.3W 80mΩ@10V,3A 1.75V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS AP13P06D A Power microelectronics TO-252 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- AP13P06D
- Brand
- A Power microelectronics
- Qty
- 580000
- Package
- TO-252
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
60V 13.5A 31.3W 80mΩ@10V,3A 1.75V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 13.5A
- Power Dissipation (Pd): 31.3W
- Drain Source On Resistance (RDS(on)@Vgs: 80mΩ@10V
- Gate Threshold Voltage (Vgs(th)@Id): 1.75V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 50pF@15V
- Type: 1 P
- Input Capacitance (Ciss@Vds): 1.137nF@15V
- Total Gate Charge (Qg@Vgs): 12.1nC@4.5V
- Operating Temperature: -55℃~+150℃@(Tj)