Semiconductors
AP10N06D A Power microelectronics Inventory and RFQ Quote
60V 13A 65mΩ@10V,10A 42W 1.6V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS AP10N06D A Power microelectronics TO-252-3 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- AP10N06D
- Brand
- A Power microelectronics
- Qty
- 588000
- Package
- TO-252-3
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
60V 13A 65mΩ@10V,10A 42W 1.6V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 13A
- Drain Source On Resistance (RDS(on)@Vgs: 65mΩ@10V
- Power Dissipation (Pd): 42W
- Gate Threshold Voltage (Vgs(th)@Id): 1.6V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 46pF@30V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 330pF@30V
- Total Gate Charge (Qg@Vgs): 5.1nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)