Transistor
AGMH12N10D AGM-Semi Inventory and RFQ Quote
100V 65A 96W 9.6mΩ@10V,20A 3V@250uA 1PCSNChannel TO-252 MOSFETs ROHS AGMH12N10D AGM-Semi Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- AGMH12N10D
- Brand
- AGM-Semi
- Qty
- 508000
- Package
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
100V 65A 96W 9.6mΩ@10V,20A 3V@250uA 1PCSNChannel TO-252 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 65A
- Power Dissipation (Pd): 96W
- Drain Source On Resistance (RDS(on)@Vgs: 9.6mΩ@10V
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1 N
- Total Gate Charge (Qg@Vgs): 21.8nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)