Semiconductors
AGM612MBQ AGM-Semi Inventory and RFQ Quote
60V 29A 13mΩ@10V,10A 20.8W 1.6V@250uA 2 N-Channel WQFN-8-EP(3.3x3.3) MOSFETs ROHS AGM612MBQ AGM-Semi Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- AGM612MBQ
- Brand
- AGM-Semi
- Qty
- 505000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
60V 29A 13mΩ@10V,10A 20.8W 1.6V@250uA 2 N-Channel WQFN-8-EP(3.3x3.3) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 29A
- Drain Source On Resistance (RDS(on)@Vgs: 13mΩ@10V
- Power Dissipation (Pd): 20.8W
- Gate Threshold Voltage (Vgs(th)@Id): 1.6V@250uA
- Type: 2 N
- Total Gate Charge (Qg@Vgs): 11.7nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)