Semiconductors
AGM312AP AGM-Semi Inventory and RFQ Quote
30V 18A 9mΩ@10V,10A 3.6W 1.6V@250uA 1PCSNChannel PDFN-8(3.3x3.3) MOSFETs ROHS AGM312AP AGM-Semi Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- AGM312AP
- Brand
- AGM-Semi
- Qty
- 531000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
30V 18A 9mΩ@10V,10A 3.6W 1.6V@250uA 1PCSNChannel PDFN-8(3.3x3.3) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 18A
- Drain Source On Resistance (RDS(on)@Vgs: 9mΩ@10V
- Power Dissipation (Pd): 3.6W
- Gate Threshold Voltage (Vgs(th)@Id): 1.6V@250uA
- Type: 1 N
- Input Capacitance (Ciss@Vds): 345pF@15V
- Total Gate Charge (Qg@Vgs): 4.1nC@4.5V
- Operating Temperature: -55℃~+150℃@(Tj)